Silicon Based Quantum Computing




Hydrogen-terminated
Silicon Surface Devices

Quantum Computer Architectures

Single Electron Transistors



Silicon-based quantum computing is a topic of intense research worldwide because of the extremely long coherence times of spin qubits in silicon and the potential for these qubits to be incorporated into future silicon devices using fabrication technology developed for conventional electronics.  Motivated by our previous theoretical work on silicon quantum computer architectures, we are currently focusing on two experimental programs here at LPS: firstly, we are investigating the use of single electron transistors (SETs) to probe isolated donors in silicon and to understand capabilities and limitations of these devices for measuring single charges and spins in silicon, a necessary first step on the road to a future silicon quantum computer.  Secondly, we have  fabricated and measured the first silicon field effect transistor (FET) devices in which mobile electrons are confined adjacent to a hydrogen terminated silicon surface. These FETs may pave the way to new atomic scale device concepts relevant to quantum computing and enable elucidation of new physics of the unique two dimensional electron systems located at these surfaces.

For more information, please peruse our recent publications or contact the people who have done the work.  For information on superconducting qubit research at LPS, please refer to Kevin Osborn’s web page.



To contact us:

Laboratory for Physical Sciences
8050 Greenmead Dr.
College Park, MD  20740
Lab Phone: 301-935-6415
Reception: 301-935-6400
Facsimile: 301-935-6723